J109 数据手册
其他文档
J108 4 pages
J109 / MMBFJ108 8 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/JFETs
- FET Type: N-Channel
- Datasheet: onsemi J109
- Operating Temperature: -55°C~+150°C@(Tj)
- Total Device Dissipation (Pd): 625mW
- Drain Current (Idss@Vds,Vgs=0): 40mA@15V
- Gate-Source Breakdown Voltage (V(BR)GSS): 25V
- Gate-Source Cutoff Voltage (VGS(off)@ID): 2V@10nA
- Static Drain-Source On Resistance (RDS(on)): 12Ω
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 12 Ohms
- Power - Max: 625mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Base Part Number: J109
- detail: JFET N-Channel 25V 625mW Through Hole TO-92-3